Warm-up spectroscopy of quadrupole-split nuclear spins in n -GaAs epitaxial layers

Photothermal deflection studies of GaAs epitaxial layers.

Photothermal beam deflection studies were carried out with GaAs epitaxial double layers grown on semi-insulating GaAs substrates. The impurity densities in thin epitaxial layers were found to influence the effective thermal diffusivity of the entire structure.

Nuclear Quadrupole Resonance Spectroscopy

Spin lifetime in InAs epitaxial layers grown on GaAs

We report investigation of the spin relaxation in InAs films grown on GaAs at a temperature range from 77 K to 290 K. InAs is known to have a surface accumulation layer and the depth profile of the concentration and mobility is strongly nonuniform. We have correlated the spin relaxation with a multilayer analysis of the transport properties and find that the surface and the interface with the G...

Quantum information processing with large nuclear spins in GaAs semiconductors.

We propose an implementation for quantum information processing based on coherent manipulations of nuclear spins I=3/2 in GaAs semiconductors. We describe theoretically an NMR method which involves multiphoton transitions and which exploits the nonequidistance of nuclear spin levels due to quadrupolar splittings. Starting from known spin anisotropies we derive effective Hamiltonians in a genera...

Photomodulated Reflectance Spectroscopy of GaAsBi/GaAs layers grown by MBE

The III-bismides are considered to be a very attractive set of III-V alloys due to their potential applications in photonic and spintronic devices. The incorporation of bismuth into GaAs, with its band anti-crossing effect in the valence band of GaAs, leads to a decrease in the temperature dependence of the bandgap. Such a material may be very useful in designing temperature-insensitive semicon...